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Strain controlled growth of crack-free GaN with low defect density on silicon (1 1 1) substrate

โœ Scribed by P. Drechsel; H. Riechert


Book ID
108166148
Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
888 KB
Volume
315
Category
Article
ISSN
0022-0248

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Role of buried cracks in mitigating stra
โœ H. Tang; J.-M. Baribeau; G.C. Aers; J. Fraser; S. Rolfe; J.A. Bardwell ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 935 KB

This paper investigates the effect of buried cracks in the AlN interlayer buffer on mitigation of the large, tensile, thermal expansion mismatch strain in the GaN/Si system, which is a key hurdle for achieving crack free GaN epitaxy on silicon. The thermally induced strain is determined by temperatu