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Optical properties of laterally overgrown GaN pyramids grown on (1 1 1) silicon substrate

โœ Scribed by Y.H Cho; B.J Kwon; H.M Kim; T.W Kang; J.J Song; W Yang


Book ID
108496996
Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
253 KB
Volume
2
Category
Article
ISSN
1567-1739

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ErP has been grown on InP (0 0 1), (1 1 1)A and (1 1 1)B substrates by low-pressure organometallic vapor-phase epitaxy. The morphological change with growth temperature has been explored by atomic force microscope. On all the substrates, ErP is grown in island structure. Height and area size of the