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Ion beam studies of MBE grown GaN films on (1 1 1) silicon substrates

✍ Scribed by E. Alves; N.P. Barradas; T. Monteiro; R. Correia; U. Kreissig


Book ID
114165296
Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
201 KB
Volume
188
Category
Article
ISSN
0168-583X

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A highly mismatched Mo/SrTiO 3 system was found to develop two non-equivalent orientation relationships between the metal film and the ceramic substrate. The molybdenum films, with a nominal thickness of 50 nm, were deposited by molecular beam epitaxy at T substrate ΒΌ 600 Β°C. The film and the substr