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RBS/Channeling study of Er doped GaN films grown by MBE on Si(1 1 1) substrates

โœ Scribed by K Lorenz; R Vianden; R Birkhahn; A.J Steckl; M.F da Silva; J.C Soares; E Alves


Book ID
114171713
Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
187 KB
Volume
161-163
Category
Article
ISSN
0168-583X

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Characterization of InN epilayers grown
โœ Yan-Hsin Wang; Wei-Li Chen; Ming-Fei Chen ๐Ÿ“‚ Article ๐Ÿ“… 2009 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 475 KB

InN films have been grown by plasma-assisted molecular beam epitaxy (PAMBE) and characterized by various technologies. It was found that the structural, optical and electrical properties can be drastically improved by raising growth temperature from 440 to 525 1C. Grainy morphology was found in the