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Photoreflectance studies of optical transitions in cubic GaN grown on GaAs(0 0 1) substrates

✍ Scribed by O.C. Noriega; A. Tabata; J.A.N.T. Soares; S.C.P. Rodrigues; J.R. Leite; E. Ribeiro; J.R.L. Fernandez; E.A. Meneses; F. Cerdeira; D.J. As; D. Schikora; K. Lischka


Book ID
108341879
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
412 KB
Volume
252
Category
Article
ISSN
0022-0248

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When the thickness of InGaN film grown on (0 0 0 1) GaN is beyond a critical value, the compressive strain will be relaxed through dislocation generation or three-dimensional growth. We calculate the InGaN critical thicknesses for dislocation generation and three-dimensional growth depending on the