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Characterization of crystal lattice constant and dislocation density of crack-free GaN films grown on Si(1 1 1)

✍ Scribed by Jijun Xiong; Jianjun Tang; Ting Liang; Yong Wang; Chenyang Xue; Weili Shi; Wendong Zhang


Book ID
103820304
Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
437 KB
Volume
257
Category
Article
ISSN
0169-4332

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This paper investigates the effect of buried cracks in the AlN interlayer buffer on mitigation of the large, tensile, thermal expansion mismatch strain in the GaN/Si system, which is a key hurdle for achieving crack free GaN epitaxy on silicon. The thermally induced strain is determined by temperatu