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Surface characterization of AlGaN grown on Si (1 1 1) substrates

✍ Scribed by Xu Pan; Xiaoliang Wang; Hongling Xiao; Cuimei Wang; Chun Feng; Lijuan Jiang; Haibo Yin; Hong Chen

Book ID
116629963
Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
596 KB
Volume
331
Category
Article
ISSN
0022-0248

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The authors report the growth of crack-free GaN on Si(1 1 1) substrate with step-graded AlGaN intermediate layers all grown at 1120 β€’ C. By preparing all these layers at high-temperature, we can simplify the growth proceduce and minimize the growth time. Using X-ray diffraction and transmission elec