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Stacking fault formation in highly doped 4H-SiC epilayers during annealing

✍ Scribed by Chung, H. J.; Liu, J. Q.; Skowronski, M.

Book ID: 120392145
Publisher: American Institute of Physics
Year: 2002
Tongue: English
Weight: 487 KB
Volume: 81
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.1519961

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