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Spontaneous formation of stacking faults in highly doped 4H–SiC during annealing

✍ Scribed by Kuhr, Thomas A.; Liu, JinQiang; Chung, Hun Jae; Skowronski, Marek; Szmulowicz, Frank


Book ID
121849191
Publisher
American Institute of Physics
Year
2002
Tongue
English
Weight
473 KB
Volume
92
Category
Article
ISSN
0021-8979

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A high density of double stacking faults consisting of six Si-C bilayers in cubic stacking sequence could be observed in 4H-SiC crystals with nitrogen doping concentrations exceeding 2 Â 10 19 cm À3 after annealing at temperatures above 1100 1C. The double stacking faults form by glide of two partia