✦ LIBER ✦

Growth Induced Stacking Fault Formation in 4H-SiC

✍ Scribed by Siche, D.; Albrecht, M.; Rost, H. J.; Sendzik, Andreas

Book ID: 121263579
Publisher: Trans Tech Publications, Ltd.
Year: 2007
Tongue: English
Weight: 967 KB
Volume: 556-557
Category: Article
ISSN: 1662-9752
DOI: 10.4028/www.scientific.net/MSF.556-557.21

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Sources of Epitaxial Growth-Induced Stac

Sources of Epitaxial Growth-Induced Stacking Faults in 4H-SiC

✍ Gan Feng; Jun Suda; Tsunenobu Kimoto 📂 Article 📅 2010 🏛 Springer US 🌐 English ⚖ 383 KB

Stacking-fault formation and propagation

Stacking-fault formation and propagation in 4H-SiC PiN diodes

✍ R. E. Stahlbush; M. Fatemi; J. B. Fedison; S. D. Arthur; L. B. Rowland; S. Wang 📂 Article 📅 2002 🏛 Springer US 🌐 English ⚖ 318 KB

Stacking-fault formation and propagation

Stacking-fault formation and propagation in 4H-SiC PiN diodes

✍ R. E. Stahlbush; M. Fatemi; J. B. Fedison; S. D. Arthur; L. B. Rowland; S. Wang 📂 Article 📅 2002 🏛 Springer US 🌐 English ⚖ 144 KB

Stacking fault formation in highly doped

Stacking fault formation in highly doped 4H-SiC epilayers during annealing

✍ Chung, H. J.; Liu, J. Q.; Skowronski, M. 📂 Article 📅 2002 🏛 American Institute of Physics 🌐 English ⚖ 487 KB

Luminescence from stacking faults in 4H

Luminescence from stacking faults in 4H SiC

✍ Sridhara, S. G.; Carlsson, F. H. C.; Bergman, J. P.; Janzen, E. 📂 Article 📅 2001 🏛 American Institute of Physics 🌐 English ⚖ 418 KB

Formation and properties of stacking fau

Formation and properties of stacking faults in nitrogen-doped 4H-SiC

✍ K. Irmscher; M. Albrecht; M. Rossberg; H.-J. Rost; D. Siche; G. Wagner 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 351 KB

A high density of double stacking faults consisting of six Si-C bilayers in cubic stacking sequence could be observed in 4H-SiC crystals with nitrogen doping concentrations exceeding 2 Â 10 19 cm À3 after annealing at temperatures above 1100 1C. The double stacking faults form by glide of two partia