𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Luminescence from stacking faults in 4H SiC

✍ Scribed by Sridhara, S. G.; Carlsson, F. H. C.; Bergman, J. P.; Janzen, E.


Book ID
115314295
Publisher
American Institute of Physics
Year
2001
Tongue
English
Weight
418 KB
Volume
79
Category
Article
ISSN
0003-6951

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Stacking faults in heavily nitrogen dope
✍ Irmscher, K.; Doerschel, J.; Rost, H. -J.; Schulz, D.; Siche, D.; Nerding, M.; S πŸ“‚ Article πŸ“… 2004 πŸ› EDP Sciences 🌐 English βš– 639 KB
Cathodoluminescence investigation of sta
✍ Juillaguet, S. ;Albrecht, M. ;Camassel, J. ;Chassagne, T. πŸ“‚ Article πŸ“… 2007 πŸ› John Wiley and Sons 🌐 English βš– 333 KB

## Abstract We report the results of a cathodoluminescence (CL) investigation performed on as‐grown stacking faults in a thick, undoped, 4H‐SiC epitaxial layer grown by CVD. To investigate the size and optical signature of the defects we used, first, room‐temperature (RTCL) and then low‐temperature

Characterization of major in-grown stack
✍ Gan Feng; Jun Suda; Tsunenobu Kimoto πŸ“‚ Article πŸ“… 2009 πŸ› Elsevier Science 🌐 English βš– 363 KB

The optical properties of major in-grown stacking faults (IGSFs) in 4H-SiC epilayers have been characterized by micro-photoluminescence (micro-PL) spectroscopy and its intensity mapping. Strong PL emissions from the IGSFs are observed even at room temperature. Three kinds of IGSFs have been identifi