Luminescence from stacking faults in 4H SiC
β Scribed by Sridhara, S. G.; Carlsson, F. H. C.; Bergman, J. P.; Janzen, E.
- Book ID
- 115314295
- Publisher
- American Institute of Physics
- Year
- 2001
- Tongue
- English
- Weight
- 418 KB
- Volume
- 79
- Category
- Article
- ISSN
- 0003-6951
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## Abstract We report the results of a cathodoluminescence (CL) investigation performed on asβgrown stacking faults in a thick, undoped, 4HβSiC epitaxial layer grown by CVD. To investigate the size and optical signature of the defects we used, first, roomβtemperature (RTCL) and then lowβtemperature
The optical properties of major in-grown stacking faults (IGSFs) in 4H-SiC epilayers have been characterized by micro-photoluminescence (micro-PL) spectroscopy and its intensity mapping. Strong PL emissions from the IGSFs are observed even at room temperature. Three kinds of IGSFs have been identifi