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Stacking faults in heavily nitrogen doped 4H-SiC

✍ Scribed by Irmscher, K.; Doerschel, J.; Rost, H. -J.; Schulz, D.; Siche, D.; Nerding, M.; Strunk, H. P.

Book ID
120478608
Publisher
EDP Sciences
Year
2004
Tongue
English
Weight
639 KB
Volume
27
Category
Article
ISSN
1286-0042

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## Abstract We report the results of a cathodoluminescence (CL) investigation performed on as‐grown stacking faults in a thick, undoped, 4H‐SiC epitaxial layer grown by CVD. To investigate the size and optical signature of the defects we used, first, room‐temperature (RTCL) and then low‐temperature