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Reducing Stacking Faults in Highly Doped N-Type 4H-SiC Crystal

✍ Scribed by Kojima, Kazutoshi; Kato, Tomohisa; Ito, Sachiko; Kojima, Jun; Hirose, Fusao; Kito, Yasuo; Yamauchi, Shoichi; Nishikawa, K.; Adachi, Ayumu

Book ID
121184299
Publisher
Trans Tech Publications, Ltd.
Year
2011
Tongue
English
Weight
875 KB
Volume
679-680
Category
Article
ISSN
1662-9752

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A high density of double stacking faults consisting of six Si-C bilayers in cubic stacking sequence could be observed in 4H-SiC crystals with nitrogen doping concentrations exceeding 2 Γ‚ 10 19 cm Γ€3 after annealing at temperatures above 1100 1C. The double stacking faults form by glide of two partia