Characterization and Formation Mechanism of Six Pointed Star-Type Stacking Faults in 4H-SiC

Formation and properties of stacking fau

Formation and properties of stacking faults in nitrogen-doped 4H-SiC

✍ K. Irmscher; M. Albrecht; M. Rossberg; H.-J. Rost; D. Siche; G. Wagner 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 351 KB

A high density of double stacking faults consisting of six Si-C bilayers in cubic stacking sequence could be observed in 4H-SiC crystals with nitrogen doping concentrations exceeding 2 Â 10 19 cm À3 after annealing at temperatures above 1100 1C. The double stacking faults form by glide of two partia