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Stability of defects created by high fluence helium implantation in silicon

โœ Scribed by M.L. David; M.F. Beaufort; J.F. Barbot

Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
595 KB
Volume
226
Category
Article
ISSN
0168-583X

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Helium was implanted into a V-4Ti alloy by using a 5 keV helium ion beam with a flux of 10 14 He/cm 2 s, and then helium retention was analyzed by a technique of thermal desorption spectroscopy (TDS). The influence of heat treatment on helium trapping was studied by pre-annealing of the samples befo