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Formation of InAs nanocrystals in Si by high-fluence ion implantation

✍ Scribed by F. Komarov; L. Vlasukova; W. Wesch; A. Kamarou; O. Milchanin; S. Grechnyi; A. Mudryi; A. Ivaniukovich

No coin nor oath required. For personal study only.

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