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Spectral ellipsometric and compositional characterization of hydrogenated amorphous silicon carbide thin films

✍ Scribed by Pascual, E.; Andújar, J.L.; Fernández, J.L.; Bertran, E.

Book ID
123173639
Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
396 KB
Volume
4
Category
Article
ISSN
0925-9635

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The properties of nitrogen-doped amorphous SiC films irradiated by pulse electron beams are presented with the I-V characteristics of diodes made of irradiated SiC films grown on silicon substrates. The results showed that the film conductivity increased by about two orders of magnitude as the nitro