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Characterization of nitrogen-doped amorphous silicon carbide thin films

✍ Scribed by J Šafránkováa; J Hurana; I Hotovýb; AP Kobzevc; SA Korenevc

Book ID
104266086
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
202 KB
Volume
51
Category
Article
ISSN
0042-207X

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✦ Synopsis

The properties of nitrogen-doped amorphous SiC films irradiated by pulse electron beams are presented with the I-V characteristics of diodes made of irradiated SiC films grown on silicon substrates. The results showed that the film conductivity increased by about two orders of magnitude as the nitrogen fraction was increased from 10 to 14 at.%. The film conductivity was enhanced tenfold by a twofold increase in pulse electron beam irradiation.

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## Abstract The influence of nitrogen on the internal structure and so on the electrical properties of silicon thin films obtained by low‐pressure chemical vapor deposition (LPCVD) was studied using several investigation methods. We found by using Raman spectroscopy and SEM observations that a stro