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Thermoelectric power in boron-doped hydrogenated amorphous-silicon and silicon-carbide thin films

✍ Scribed by Ratnabali Banerjee; Swati Ray


Book ID
119444036
Publisher
Elsevier Science
Year
1987
Tongue
English
Weight
389 KB
Volume
89
Category
Article
ISSN
0022-3093

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Characterization of nitrogen-doped amorp
✍ J Ε afrΓ‘nkovΓ‘a; J Hurana; I HotovΓ½b; AP Kobzevc; SA Korenevc πŸ“‚ Article πŸ“… 1998 πŸ› Elsevier Science 🌐 English βš– 202 KB

The properties of nitrogen-doped amorphous SiC films irradiated by pulse electron beams are presented with the I-V characteristics of diodes made of irradiated SiC films grown on silicon substrates. The results showed that the film conductivity increased by about two orders of magnitude as the nitro