A silicon nitride Γlm was deposited on an Si(100) substrate with a silicon dioxide surface layer from and NH 3 by low-pressure chemical vapour deposition under various conditions. The etching rates of the silicon SiH 2 Cl 2 nitride Γlms by bu β ered hydroΓuoric acid (BHF) were investigated using Ruth
Some recent trends in the preparation of thin layers by low pressure chemical vapour deposition
β Scribed by Michael L Hitchman; Waqar Ahmed
- Publisher
- Elsevier Science
- Year
- 1984
- Tongue
- English
- Weight
- 904 KB
- Volume
- 34
- Category
- Article
- ISSN
- 0042-207X
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