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Solution precursor chemical vapor deposition of titanium oxide thin films

โœ Scribed by Jiong-Ping Lu; Jenqdaw Wang; Rishi Raj

Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
538 KB
Volume
204
Category
Article
ISSN
0040-6090

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Cp2TiCH2Si(Me2)NSiMe3: A Single-Source P
Cp2TiCH2Si(Me2)NSiMe3: A Single-Source Precursor to Titanium-based Ceramic Thin Films by Chemical Vapor Deposition
โœ Benoit Chansou; Robert Choukroun; Lydie Valade ๐Ÿ“‚ Article ๐Ÿ“… 1997 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 223 KB ๐Ÿ‘ 1 views

The four-membered-ring heterocyclic molecule Cp 2 TiCH 2 Si(Me 2 )NSiMe 3 (1; Cp = ฯช C 5 H 5 ) was studied as a single-source precursor to titanium-based ceramic thin films. Its decomposition was studied at atmospheric and low pressure under nitrogen, argon and helium by TG-DTA-MS. Thin films contai