𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Chemical Vapor Deposition of Thin-Film Dielectrics

✍ Scribed by V. Yu. Vasilev; S. M. Repinsky

Publisher
John Wiley and Sons
Year
2005
Weight
8 KB
Volume
36
Category
Article
ISSN
0931-7597

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Ultralow Dielectric Constant Tetravinylt
Ultralow Dielectric Constant Tetravinyltetramethylcyclotetrasiloxane Films Deposited by Initiated Chemical Vapor Deposition (iCVD)
✍ Nathan J. Trujillo; Qingguo Wu; Karen K. Gleason πŸ“‚ Article πŸ“… 2010 πŸ› John Wiley and Sons 🌐 English βš– 374 KB πŸ‘ 1 views

## Abstract Simultaneous improvement of mechanical properties and lowering of the dielectric constant occur when films grown from the cyclic monomer tetravinyltetramethylcyclotetrasiloxane (V4D4) via initiated chemical vapor deposition (iCVD) are thermally cured in air. Clear signatures from silses

ChemInform Abstract: Metalorganic Chemic
ChemInform Abstract: Metalorganic Chemical Vapor Deposition of Indium Selenide Thin Films.
✍ S. L. STOLL; A. R. BARRON πŸ“‚ Article πŸ“… 2010 πŸ› John Wiley and Sons βš– 33 KB πŸ‘ 1 views

InSe films are grown at 230-420 β€’ C by low-pressure MOCVD from [(tBu) 2 In(Β΅-SetBu)] 2 and [(Me 2 EtC)In(Β΅ 3 -Se)] 4 . Energy-dispersive X-ray analysis shows that films grown from the first precursor are In rich, while those from the second one are stoichiometric InSe. At temperatures Β‘ 330 β€’ C ball