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ChemInform Abstract: Chemical Vapor Deposition of Gallium Sulfide Thin Films.

✍ Scribed by Seigi Suh; David M. Hoffman

Publisher
John Wiley and Sons
Year
2001
Weight
33 KB
Volume
32
Category
Article
ISSN
0931-7597

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ChemInform Abstract: Metalorganic Chemic
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✍ S. L. STOLL; A. R. BARRON πŸ“‚ Article πŸ“… 2010 πŸ› John Wiley and Sons βš– 33 KB πŸ‘ 1 views

InSe films are grown at 230-420 β€’ C by low-pressure MOCVD from [(tBu) 2 In(Β΅-SetBu)] 2 and [(Me 2 EtC)In(Β΅ 3 -Se)] 4 . Energy-dispersive X-ray analysis shows that films grown from the first precursor are In rich, while those from the second one are stoichiometric InSe. At temperatures Β‘ 330 β€’ C ball