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Cp2TiCH2Si(Me2)NSiMe3: A Single-Source Precursor to Titanium-based Ceramic Thin Films by Chemical Vapor Deposition

✍ Scribed by Benoit Chansou; Robert Choukroun; Lydie Valade

Publisher: John Wiley and Sons
Year: 1997
Tongue: English
Weight: 223 KB
Volume: 11
Category: Article
ISSN: 0268-2605
DOI: 10.1002/(sici)1099-0739(199703)11:3<195::aid-aoc541>3.0.co;2-q

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✦ Synopsis

The four-membered-ring heterocyclic molecule Cp 2 TiCH 2 Si(Me 2 )NSiMe 3 (1; Cp = Ϫ C 5 H 5 ) was studied as a single-source precursor to titanium-based ceramic thin films. Its decomposition was studied at atmospheric and low pressure under nitrogen, argon and helium by TG-DTA-MS. Thin films containing the four elements of the metallacycle and oxygen were deposited on silicon substrates by low-pressure (20 Torr) chemical vapor deposition (CVD) between 773 and 923 K. Films were characterized by SEM-EDS, XPS, EPMA-WDS and XRD analyses.

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