We have investigated the dynamics of intrinsic dielectric breakdown (BD) in SiO thin films of thickness in the range 2 from 35 to 3 nm. BD is obtained under constant voltage Fowler-Nordheim stress at fields between 10 and 12.5 MV/ cm. As a function of oxide thickness we have followed with high time
Soft breakdown of ultra-thin gate oxide layers
โ Scribed by Depas, M.; Nigam, T.; Heyns, M.M.
- Book ID
- 114536582
- Publisher
- IEEE
- Year
- 1996
- Tongue
- English
- Weight
- 711 KB
- Volume
- 43
- Category
- Article
- ISSN
- 0018-9383
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