Gate leakage current of NMOSFET with ultra-thin gate oxide
✍ Scribed by Shi-gang Hu 胡仕刚, Xiao-Feng Wu 吴笑峰, Zai-fang Xi 席在芳
- Book ID
- 118818302
- Publisher
- Central South University
- Year
- 2012
- Tongue
- English
- Weight
- 519 KB
- Volume
- 19
- Category
- Article
- ISSN
- 2095-2899
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📜 SIMILAR VOLUMES
Constant current stress induced leakage currents are studied in very thin oxide devices, for both stress polarities. This current has been investigated for both positive and negative gate voltage measurements. Stress induced leakage current (SILC) physical nature has been studied and an interpretati
The origin of the substrate current in nMOSFET after hard gate oxide breakdown is studied as a function of the breakdown position. The breakdown path is modeled by a narrow ( | 5 nm diameter) inclusion of highly doped n-type silicon in SiO . Device simulations excellently reproduce all post-breakdow