✦ LIBER ✦
Analysis and modeling of the gate leakage current in advanced nMOSFET devices with severe gate-to-drain dielectric breakdown
✍ Scribed by E. Miranda; T. Kawanago; K. Kakushima; J. Suñé; H. Iwai
- Book ID
- 119326670
- Publisher
- Elsevier Science
- Year
- 2012
- Tongue
- English
- Weight
- 526 KB
- Volume
- 52
- Category
- Article
- ISSN
- 0026-2714
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