Constant current stress induced leakage currents are studied in very thin oxide devices, for both stress polarities. This current has been investigated for both positive and negative gate voltage measurements. Stress induced leakage current (SILC) physical nature has been studied and an interpretati
✦ LIBER ✦
Stress induced gate–drain leakage current in ultra-thin gate oxide
✍ Scribed by C. Petit; D. Zander
- Book ID
- 108210671
- Publisher
- Elsevier Science
- Year
- 2007
- Tongue
- English
- Weight
- 871 KB
- Volume
- 47
- Category
- Article
- ISSN
- 0026-2714
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
Stress induced leakage current in ultra-
✍
A. Scarpa; G. Ghibaudo; G. Ghidini; G. Pananakakis; A. Paccagnella
📂
Article
📅
1997
🏛
Elsevier Science
🌐
English
⚖ 216 KB
Gate leakage current of NMOSFET with ult
✍
Shi-gang Hu 胡仕刚, Xiao-Feng Wu 吴笑峰, Zai-fang Xi 席在芳
📂
Article
📅
2012
🏛
Central South University
🌐
English
⚖ 519 KB
Gate-induced drain leakage current in MO
✍
Nathan, V.; Das, N.C.
📂
Article
📅
1993
🏛
IEEE
🌐
English
⚖ 305 KB
Gate induced leakage and drain current o
✍
Huiping Jia; Gaurang K. Pant; Erich K. Gross; Robert M. Wallace; Bruce E. Gnade
📂
Article
📅
2006
🏛
Elsevier Science
🌐
English
⚖ 172 KB
Gate bias induced leakage current and drain current offset limit device performance in poly 3-hexylthiophene (P3HT) organic thin film transistors (OTFTs). The drain current offset distorts the drain current in the linear region of the transistor performance curve, making it difficult to extract devi
Enhanced gate induced drain leakage curr
✍
Moshe Gurfinkel; John S. Suehle; Yoram Shapira
📂
Article
📅
2009
🏛
Elsevier Science
🌐
English
⚖ 817 KB
Stress-induced leakage current at low fi
✍
M Fadlallah; G Ghibaudo; M Bidaud; O Simonetti; F Guyader
📂
Article
📅
2004
🏛
Elsevier Science
🌐
English
⚖ 375 KB