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Enhanced gate induced drain leakage current in HfO2 MOSFETs

✍ Scribed by Moshe Gurfinkel; John S. Suehle; Yoram Shapira

Publisher: Elsevier Science
Year: 2009
Tongue: English
Weight: 817 KB
Volume: 86
Category: Article
ISSN: 0167-9317
DOI: 10.1016/j.mee.2009.02.029

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