Carrier lifetime analysis in thin gate oxide FD-SOI n-MOSFETs by gate-induced drain current transients

✍ Scribed by K. Hayama; K. Takakura; H. Ohyama; J. M. Rafí; A. Mercha; E. Simoen; C. Claeys

• Publisher: Springer US
• Year: 2007
• Tongue: English
• Weight: 452 KB
• Volume: 19
• Category: Article
• ISSN: 0957-4522
• DOI: 10.1007/s10854-007-9301-x