Drain current enhancement and negligible current collapse in GaN MOSFETs with atomic-layer-deposited HfO2 as a gate dielectric

✍ Scribed by Y.C. Chang; W.H. Chang; Y.H. Chang; J. Kwo; Y.S. Lin; S.H. Hsu; J.M. Hong; C.C. Tsai; M. Hong

• Publisher: Elsevier Science
• Year: 2010
• Tongue: English
• Weight: 628 KB
• Volume: 87
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/j.mee.2010.02.013