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Gate-induced drain leakage current in MOS devices

✍ Scribed by Nathan, V.; Das, N.C.


Book ID
114535629
Publisher
IEEE
Year
1993
Tongue
English
Weight
305 KB
Volume
40
Category
Article
ISSN
0018-9383

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Gate bias induced leakage current and drain current offset limit device performance in poly 3-hexylthiophene (P3HT) organic thin film transistors (OTFTs). The drain current offset distorts the drain current in the linear region of the transistor performance curve, making it difficult to extract devi