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Temperature and drain voltage dependence of gate-induced drain leakage

✍ Scribed by L Lopez; P Masson; D Née; R Bouchakour


Book ID
108207313
Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
199 KB
Volume
72
Category
Article
ISSN
0167-9317

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Gate bias induced leakage current and drain current offset limit device performance in poly 3-hexylthiophene (P3HT) organic thin film transistors (OTFTs). The drain current offset distorts the drain current in the linear region of the transistor performance curve, making it difficult to extract devi