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Revisited approach for the characterization of Gate Induced Drain Leakage

✍ Scribed by Quentin Rafhay; Cuiqin Xu; Perrine Batude; Mireille Mouis; Maud Vinet; Gérard Ghibaudo

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

[IEEE 2011 12th International Conference

✍ Rafhay, Quentin; Xu, Cuiqin; Batude, Perrine; Mouis, Mireille; Vinet, Maud; Ghib 📂 Article 📅 2011 🏛 IEEE ⚖ 122 KB

Temperature dependence of gate induced d

✍ Ghibaudo, G; Rais, K.; Balestra, F. 📂 Article 📅 1994 🏛 The Institution of Electrical Engineers 🌐 English ⚖ 313 KB

Characterization of an Oxide Trap Leadin

✍ Byoungchan Oh; Heung-Jae Cho; Heesang Kim; Younghwan Son; Taewook Kang; Sunyoung 📂 Article 📅 2011 🏛 IEEE 🌐 English ⚖ 690 KB

Band-to-Band Tunneling by Monte Carlo Si

✍ Edwin C. Kan; Venkat Narayanan; Gen Pei 📂 Article 📅 2002 🏛 Springer 🌐 English ⚖ 358 KB

Design for suppression of gate-induced d

✍ Parke, S.A.; Moon, J.E.; Wann, H.C.; Ko, P.K.; Hu, C. 📂 Article 📅 1992 🏛 IEEE 🌐 English ⚖ 993 KB

A new model for the description of gate

✍ Rosar, M.; Leroy, B.; Schweeger, G. 📂 Article 📅 2000 🏛 IEEE 🌐 English ⚖ 178 KB