Design for suppression of gate-induced drain leakage in LDD MOSFETs using a quasi-two-dimensional analytical model

✍ Scribed by Parke, S.A.; Moon, J.E.; Wann, H.C.; Ko, P.K.; Hu, C.

• Book ID: 114534662
• Publisher: IEEE
• Year: 1992
• Tongue: English
• Weight: 993 KB
• Volume: 39
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.141236