Gate-induced drain leakage current enhanced by plasma charging damage

✍ Scribed by Siguang Ma; Yaohui Zhang; Li, M.F.; Weidan Li; Joseph Xie; Sheng, G.T.T.; Yen, A.C.; Wang, J.L.F.

• Book ID: 114538669
• Publisher: IEEE
• Year: 2001
• Tongue: English
• Weight: 90 KB
• Volume: 48
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.918252