๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Accelerated Discrete Degradation Models for Leakage Current of Ultra-Thin Gate Oxides

โœ Scribed by Min-Hsiung Hsieh; Shuen-Lin Jeng


Book ID
114668575
Publisher
IEEE
Year
2007
Tongue
English
Weight
420 KB
Volume
56
Category
Article
ISSN
0018-9529

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Gate leakage current of NMOSFET with ult
โœ Shi-gang Hu ่ƒกไป•ๅˆš, Xiao-Feng Wu ๅด็ฌ‘ๅณฐ, Zai-fang Xi ๅธญๅœจ่Šณ ๐Ÿ“‚ Article ๐Ÿ“… 2012 ๐Ÿ› Central South University ๐ŸŒ English โš– 519 KB