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An improved substrate current model for ultra-thin gate oxide MOSFETs

โœ Scribed by Lin-An Yang; Yue Hao; Chun-Li Yu; Feng-Yan Han

Book ID
108269532
Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
237 KB
Volume
50
Category
Article
ISSN
0038-1101

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Effect of reverse substrate bias on ultr
Effect of reverse substrate bias on ultra-thin gate oxide n-MOSFET degradation under different stress modes
โœ Yao Zhao; Mingzhen Xu; Changhua Tan ๐Ÿ“‚ Article ๐Ÿ“… 2006 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 169 KB

Degradation of ultra-thin gate oxide n-MOSFET with halo structure is studied under different stress modes with the increase of reverse substrate bias. The variation of device degradation is characterized by monitoring the substrate current during stress. When the gate voltage is smaller than a criti