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A physical compact DC drain current model for long-channel undoped ultra-thin body (UTB) SOI and asymmetric double-gate (DG) MOSFETs with independent gate operation

✍ Scribed by F. Lime; R. Ritzenthaler; M. Ricoma; F. Martinez; F. Pascal; E. Miranda; O. Faynot; B. Iñiguez


Book ID
108271841
Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
582 KB
Volume
57
Category
Article
ISSN
0038-1101

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