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Explanation of nMOSFET substrate current after hard gate oxide breakdown

โœ Scribed by B Kaczer; R Degraeve; A De Keersgieter; M Rasras; G Groeseneken

Book ID
104305654
Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
378 KB
Volume
59
Category
Article
ISSN
0167-9317

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โœฆ Synopsis

The origin of the substrate current in nMOSFET after hard gate oxide breakdown is studied as a function of the breakdown position. The breakdown path is modeled by a narrow ( | 5 nm diameter) inclusion of highly doped n-type silicon in SiO . Device simulations excellently reproduce all post-breakdown nMOSFET characteristics, including the substrate 2 current behavior, for both gate-to-substrate and gate-to-extension breakdowns. The model also identifies the origin of impact ionization and recombination observed in emission spectra.

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Carrier transport properties of thin gat
Carrier transport properties of thin gate oxides after soft and hard breakdown
โœ Shin-ichi Takagi; Mariko Takayanagi ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 332 KB

This paper presents the experimental results of the carrier conduction mechanism in thin gate oxides after soft and hard breakdowns, obtained from the carrier separation technique. This technique allows the identification of the dominant carrier type on the gate leakage current, which is shown to be