Explanation of nMOSFET substrate current
โ
B Kaczer; R Degraeve; A De Keersgieter; M Rasras; G Groeseneken
๐
Article
๐
2001
๐
Elsevier Science
๐
English
โ 378 KB
The origin of the substrate current in nMOSFET after hard gate oxide breakdown is studied as a function of the breakdown position. The breakdown path is modeled by a narrow ( | 5 nm diameter) inclusion of highly doped n-type silicon in SiO . Device simulations excellently reproduce all post-breakdow