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Consistent model for short-channel nMOSFET after hard gate oxide breakdown

โœ Scribed by Kaczer, B.; Degraeve, R.; De Keersgieter, A.; Van de Mieroop, K.; Simons, V.; Groeseneken, G.


Book ID
114539028
Publisher
IEEE
Year
2002
Tongue
English
Weight
197 KB
Volume
49
Category
Article
ISSN
0018-9383

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๐Ÿ“œ SIMILAR VOLUMES


Explanation of nMOSFET substrate current
โœ B Kaczer; R Degraeve; A De Keersgieter; M Rasras; G Groeseneken ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 378 KB

The origin of the substrate current in nMOSFET after hard gate oxide breakdown is studied as a function of the breakdown position. The breakdown path is modeled by a narrow ( | 5 nm diameter) inclusion of highly doped n-type silicon in SiO . Device simulations excellently reproduce all post-breakdow