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Characterization of soft breakdown in thin oxide NMOSFETs based on the analysis of the substrate current

✍ Scribed by Crupi, F.; Iannaccone, G.; Crupi, I.; Degraeve, R.; Groeseneken, G.; Maes, H.E.


Book ID
114538689
Publisher
IEEE
Year
2001
Tongue
English
Weight
86 KB
Volume
48
Category
Article
ISSN
0018-9383

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## Abstract We report the effect of substrate thickness on the optical and thermal characteristics of InGaN/GaN light emitting diodes (LEDs), operating at __Ξ»__β€‰βˆΌβ€‰450 nm, with different mesa sizes. For various mesa sizes with different substrate thicknesses, the junction temperature (__T__~j~) is m