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On the role of holes in oxide breakdown mechanism in inverted nMOSFETs

✍ Scribed by F Monsieur; E Vincent; V Huard; S Bruyère; D Roy; T Skotnicki; G Pananakakis; G Ghibaudo


Book ID
108361982
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
133 KB
Volume
43
Category
Article
ISSN
0026-2714

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