𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Detailed study and projection of hard breakdown evolution in ultra-thin gate oxides

✍ Scribed by J.S. Suehle; B. Zhu; Y. Chen; J.B. Bernstein

Book ID
108210511
Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
578 KB
Volume
45
Category
Article
ISSN
0026-2714

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Modeling the breakdown and breakdown sta
Modeling the breakdown and breakdown statistics of ultra-thin SiO2 gate oxides
✍ Jordi SuΓ±Γ©; Ernest Wu πŸ“‚ Article πŸ“… 2001 πŸ› Elsevier Science 🌐 English βš– 101 KB

A complete picture of breakdown is presented and compared with a full set of experiments. First, an analytical model for the breakdown statistics is proposed. This model is shown to have essentially the same predictive power as the percolation approach. Second, a hydrogen-based quantitative picture

Carrier transport properties of thin gat
Carrier transport properties of thin gate oxides after soft and hard breakdown
✍ Shin-ichi Takagi; Mariko Takayanagi πŸ“‚ Article πŸ“… 2001 πŸ› Elsevier Science 🌐 English βš– 332 KB

This paper presents the experimental results of the carrier conduction mechanism in thin gate oxides after soft and hard breakdowns, obtained from the carrier separation technique. This technique allows the identification of the dominant carrier type on the gate leakage current, which is shown to be

Transients during pre-breakdown and hard
Transients during pre-breakdown and hard breakdown of thin gate oxides in metal–SiO2–Si capacitors
✍ S Lombardo; F Crupi; C Spinella; B Neri πŸ“‚ Article πŸ“… 1999 πŸ› Elsevier Science 🌐 English βš– 939 KB

TimeΒ±resolved electrical measurements show transient phenomena occurring during degradation and intrinsic dielectric breakdown of gate oxide layers under constant voltage FowlerΒ±Nordheim stress. We have studied such transients in metal/oxide/semiconductor (MOS) capacitors with an n + poly-crystallin