A thorough study of quasi-breakdown phenomenon of thin gate oxide in dual-gate CMOSFET's

✍ Scribed by Hao Guan; Ming-Fu Li; Yandong He; Byung Jin Cho; Zhong Dong

• Book ID: 114538255
• Publisher: IEEE
• Year: 2000
• Tongue: English
• Weight: 188 KB
• Volume: 47
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.853038