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A method of eliminating B-mode dielectric breakdown failure in gate oxides utilizing a charging phenomenon

✍ Scribed by Ajioka, T.; Nara, A.; Tominaga, Y.; Ushikoshi, T.; Kitabayashi, H.


Book ID
114535472
Publisher
IEEE
Year
1993
Tongue
English
Weight
513 KB
Volume
40
Category
Article
ISSN
0018-9383

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