## Abstract In this paper, a small signal model of SOI MOSFET operating in the inversion region is developed, taking into account the distributed nature of the gate structure. Because the width of the device is large compared to its length, it is essential to consider it as a transmission line. The
Small-signal analytical MOSFET model for microwave frequency applications
β Scribed by Anisha Goswami; Anju Agrawal; Ciby T. Thuruthiyil; Mridula Gupta; R. S. Gupta
- Publisher
- John Wiley and Sons
- Year
- 2000
- Tongue
- English
- Weight
- 240 KB
- Volume
- 25
- Category
- Article
- ISSN
- 0895-2477
No coin nor oath required. For personal study only.
β¦ Synopsis
Figure 6 Linear interpolation errors 6. CONCLUSIONS
Module-phase interpolation techniques for ray-tracing models using GTD and Fresnel reflection coefficients have been presented. These interpolations show a better performance than the linear approximations due to the fact that the proposed methods take into account phase information and, for the diffraction rays, the shadow boundaries. These methods can be used for accelerating ray propagation simulations that require high computation times.
π SIMILAR VOLUMES
## Abstract An improved model of a modified intrinsic equivalent circuit of deltaβdoped AlGaAs/InGaAs/GaAs HEMT, which incorporates the additional capacitive effect physically present due to delta doping and a feedback resistor between gate and drain, is proposed. Admittance parameters of the devic
rower than the achieved ; 25% impedance bandwidth. According to the measurements, good dual linear polarization characteristics can be realized between the two resonance frequencies.
## Abstract Noise analysis for AlGaAs/GaAs HEMT and AlGaAs/InGaAs/GaAs PHEMT is developed at microwave frequency using an accurate charge control approach. The smallβsignal parameters and the drain and gateβnoise sources are calculated to determine the noise coefficients and correlation coefficient
In this article, bias-dependent small-signal modeling approach based on neuro-space mapping is proposed for MOSFET. Good agreement is obtained between the simulated and measured results for a 130 nm MOSFET in the frequency range of 100 MHz-40 GHz confirming the validity and effectiveness of our appr