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A distributed network model of SOI MOSFET for microwave frequency applications

✍ Scribed by Nirupama Kapoor; Subhasis Haldar; Mridula Gupta; R. S. Gupta

Publisher
John Wiley and Sons
Year
2003
Tongue
English
Weight
167 KB
Volume
37
Category
Article
ISSN
0895-2477

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✦ Synopsis

Abstract

In this paper, a small signal model of SOI MOSFET operating in the inversion region is developed, taking into account the distributed nature of the gate structure. Because the width of the device is large compared to its length, it is essential to consider it as a transmission line. The y and s parameters have been evaluated to obtain various gains, which otherwise cannot be predicted using lumped analysis. This model is useful in predicting the device's high‐frequency performance. © 2003 Wiley Periodicals, Inc. Microwave Opt Technol Lett 37: 26–31, 2003; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.10814

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