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Analytical noise model of a high-electron-mobility transistor for microwave-frequency application

✍ Scribed by Vandana Guru; H. P. Vyas; Mridula Gupta; R. S. Gupta

Publisher
John Wiley and Sons
Year
2004
Tongue
English
Weight
154 KB
Volume
40
Category
Article
ISSN
0895-2477

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✦ Synopsis

Abstract

Noise analysis for AlGaAs/GaAs HEMT and AlGaAs/InGaAs/GaAs PHEMT is developed at microwave frequency using an accurate charge control approach. The small‐signal parameters and the drain and gate‐noise sources are calculated to determine the noise coefficients and correlation coefficients. Finally, the minimum noise figure is evaluated by incorporating the extrinsic noise sources and compared with the experimental data, which is in excellent agreement. © 2004 Wiley Periodicals, Inc. Microwave Opt Technol Lett 40: 410–417, 2004; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.11396

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rower than the achieved ; 25% impedance bandwidth. According to the measurements, good dual linear polarization characteristics can be realized between the two resonance frequencies.