𝔖 Bobbio Scriptorium
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SPICE-compatible microwave model of an optically controlled high electron mobility transistor

✍ Scribed by Chakrabarti, P. ;Mishra, B. K. ;Madheswaran, M.


Publisher
John Wiley and Sons
Year
1996
Tongue
English
Weight
761 KB
Volume
6
Category
Article
ISSN
1050-1827

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Analytical noise model of a high-electro
✍ Vandana Guru; H. P. Vyas; Mridula Gupta; R. S. Gupta 📂 Article 📅 2004 🏛 John Wiley and Sons 🌐 English ⚖ 154 KB

## Abstract Noise analysis for AlGaAs/GaAs HEMT and AlGaAs/InGaAs/GaAs PHEMT is developed at microwave frequency using an accurate charge control approach. The small‐signal parameters and the drain and gate‐noise sources are calculated to determine the noise coefficients and correlation coefficient